| PART |
Description |
Maker |
| SPD502SMS SPD503SMS SPD504SMS SPD505SMS SPD506SMS |
5AMP 200-600VOLTS 40 nsec HYPER FAST RECTIFIER
|
Solid States Devices, Inc
|
| SM5200DS-15 |
5Amp. Schottky Barrier Rectifiers
VOLTAGE 200 V 5Amp. Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnol...
|
| 1N4148SM |
200 mAMP 75 VOLTS 5 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices Inc]
Solid States Devices, Inc
|
| SDR720 SDR705 SDR710 SDR715 |
70 AMP 50-200 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SRS1N SRS1D SRS1G SRS1J SRS1K SRS1M |
1 AMP 200-1200 VOLTS 50-65 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| SPD51SM SPD48SM SPD49SM SPD50SM |
200 mAMP 50 - 125 VOLTS 5 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| APT15S20KCTG APT15S20KCT |
Schottky Center Tap RECTIFIER; Package: TO-220 [K]; VR (V): 200; IO (A): 15; VF (V): 0.8; trr (nsec): 20; Qrr (nC): 440; 25 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
HIGH VOLTAGE SCHOTTKY DIODE
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
Microsemi Corporation
|
| APT2X31D20J_05 APT2X30D20J APT2X31D20J APT2X31D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
